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Synthesis of gallium nitride nanostructure on silicon substrate by PACVD
Poster Presentation
Authors
1Department of Physics and Chemistry, Faculty of Basic Sciences, Imam Ali University, Tehran, Iran
2Physics and Chemistry Group, Faculty of Basic Sciences, Imam Ali University, Tehran, Iran
Abstract
Gallium Nitride is an optoelectronic material that has many applications in the field of electronics. In this research, the fabrication method of gallium nitride (GaN) nanostructure on silicon substrate by chemical vapor deposition with the help of plasma (PACVD) was investigated and the morphological properties of this nanostructure were evaluated.The precursor used in this research was a combination of Gallium chloride) GaCl3( and H2, N2 and Ar gases. Growth mechanism, Morphological structure and properties of gallium nitride nanostructure on silicon as substrate were investigated using imaging device FE-SEM and GIXRD at 520°C was observed. The images of GaN show that the grain sizes have two peak of intensity.
Keywords