| Synthesis of gallium nitride nanostructure on silicon substrate by PACVD |
| Paper ID : 1108-UFGNSM2021-FULL |
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Oral / Poster Presentation File |
| Authors: |
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Mahdi Gholampour *1, Mahdi Arabali2 1Department of Physics and Chemistry, Faculty of Basic Sciences, Imam Ali University, Tehran, Iran 2Physics and Chemistry Group, Faculty of Basic Sciences, Imam Ali University, Tehran, Iran |
| Abstract: |
| Gallium Nitride is an optoelectronic material that has many applications in the field of electronics. In this research, the fabrication method of gallium nitride (GaN) nanostructure on silicon substrate by chemical vapor deposition with the help of plasma (PACVD) was investigated and the morphological properties of this nanostructure were evaluated.The precursor used in this research was a combination of Gallium chloride) GaCl3( and H2, N2 and Ar gases. Growth mechanism, Morphological structure and properties of gallium nitride nanostructure on silicon as substrate were investigated using imaging device FE-SEM and GIXRD at 520°C was observed. The images of GaN show that the grain sizes have two peak of intensity. |
| Keywords: |
| GaN, Nanostructure, PACVD, Plasma, Chemical Vapor Veposition |
| Status : Paper Published |
